A Modified Ebers-Moll Transistor Model for RF-Interference Analysis

This paper develops analytical techniques for the study of nonlinear RF and microwave effects in semiconductor devices. Rectification in p-n junctions is discussed, and a novel large-signal transistor model is developed, based upon modifications to standard Ebers-Moll formulations for bipolar transistors. Use of the models in worst-case analysis is discussed, with ranges of parameters given based on a simplified analysis of rectification in ideal diodes.