Title :
A Modified Ebers-Moll Transistor Model for RF-Interference Analysis
Author :
Larson, Curtis E. ; Roe, James M.
Author_Institution :
McDonnell Douglas Astronautics Company, St. Louis, MO 63166 (314)232-3902
Abstract :
This paper develops analytical techniques for the study of nonlinear RF and microwave effects in semiconductor devices. Rectification in p-n junctions is discussed, and a novel large-signal transistor model is developed, based upon modifications to standard Ebers-Moll formulations for bipolar transistors. Use of the models in worst-case analysis is discussed, with ranges of parameters given based on a simplified analysis of rectification in ideal diodes.
Keywords :
Circuits; Envelope detectors; Microwave transistors; P-n junctions; RF signals; Radar detection; Radio frequency; Radiofrequency interference; Semiconductor devices; Voltage; Transistor model; bipolar; large signal; modified Ebers-Moll; nonlinear effects;
Journal_Title :
Electromagnetic Compatibility, IEEE Transactions on
DOI :
10.1109/TEMC.1979.303768
