DocumentCode :
1107651
Title :
Structure and ferroelectric properties of Bi(Zn1/2Ti1/2)O3-(Bi1/2K1/2)TiO3 perovskite solid solutions
Author :
Huang, Chien-Chih ; Vittayakorn, Naratip ; Cann, David P.
Author_Institution :
Dept. of Mater. Sci., Oregon State Univ., Corvallis, OR
Volume :
56
Issue :
7
fYear :
2009
fDate :
7/1/2009 12:00:00 AM
Firstpage :
1304
Lastpage :
1308
Abstract :
Lead-free piezoelectric ceramics based on chiBi(Zn1/2Ti1/2)O3-(1-chi)(Bi1/2K1/2)TiO3 were obtained via solid state processing techniques. A single perovskite phase with tetragonal symmetry was obtained for Bi(Zn1/2Ti1/2)O3 (BZT) substitutions up to 20 mol%. The maximum density was 97.1% at the composition of chi = 0.1. The dielectric measurement indicated that the transition temperature decreased linearly with increasing BZT content. The P-E loops revealed an increase in remanent polarization (Pr) with the addition of BZT. The maximum planar coupling coefficient, kappar, for the chi = 0.1 composition was 21.6 and the piezoelectric coefficient, d33, for chi = 0, chi = 0.05, and chi = 0.1 was 108, 185, and 235 pm/V, respectively. Overall, the dielectric and piezoelectric properties showed significant improvement when BZT was added.
Keywords :
bismuth compounds; crystal symmetry; dielectric hysteresis; dielectric polarisation; ferroelectricity; materials preparation; piezoceramics; potassium compounds; solid solutions; Bi(Zn0.5Ti0.5)O3-(Bi0.5K0.5)TiO3; P-E loops; dielectric analysis; ferroelectric properties; lead-free piezoelectric ceramics; maximum planar coupling coefficient; perovskite solid solutions; piezoelectric coefficient; remanent polarization; solid state processing techniques; structural properties; tetragonal symmetry; Ceramics; Chemical technology; Dielectric constant; Dielectric loss measurement; Ferroelectric materials; Materials science and technology; Optical sensors; Pattern analysis; Solids; Temperature sensors;
fLanguage :
English
Journal_Title :
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
Publisher :
ieee
ISSN :
0885-3010
Type :
jour
DOI :
10.1109/TUFFC.2009.1186
Filename :
5116856
Link To Document :
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