Title :
Computer-Aided Analysis of RFI Effects in Digital Integrated Circuits
Author :
Whalen, James J. ; Tront, Joseph G. ; Larson, Curtis E. ; Roe, James M.
Author_Institution :
Department of Electrical Engineering, State University at Buffalo, Amherst, NY 14226. (716)831-1835
Abstract :
A computer-aided analysis procedure based upon a modified Ebers-Moli transistor model is used to predict RFI effects in bipolar integrated circuits (IC´s). The procedure is applied to a digital IC to determine the RF power levels that cause several EM susceptibility thresholds to be exceeded.
Keywords :
Bipolar integrated circuits; Computer aided analysis; Digital integrated circuits; Integrated circuit modeling; Radio frequency; Radiofrequency integrated circuits; Radiofrequency interference; SPICE; Skin; Voltage; Bipolar integrated circuits; RFI effects; computer-aided analysis procedure; modified Ebers-Moll transistor model;
Journal_Title :
Electromagnetic Compatibility, IEEE Transactions on
DOI :
10.1109/TEMC.1979.303769
