Title :
Computer-Aided Analysis of RFI Effects in Operational Amplifiers
Author :
Tront, Joseph G. ; Whalen, James J. ; Larson, Curtis E. ; Roe, James M.
Author_Institution :
Department of Electrical Engineering, Virginia Polytechnic Institute and State University. Blacksburg. VA 24061
Abstract :
The modified Ebers-Moll model is used to predict RFI effects in the 741 operational amplifier (op amp)-a bipolar linear integrated circuit (IC). RFI susceptibility predictions for RF incident upon the op-amp input terminals are made using a complete model, a macromodel, and a voltage-offset model. Both the batch-mode computer program SPICE 2 and the commercial interactive computer program ISPICE are used. The three sets of calculated results are essentially identical and agree within 4 dB with experimental results measured at 220 MHz. A threshold cannot be given for the RF power level at which a 741 op amp is susceptible to RFI. The level depends upon the op-amp circuit application. For op-amp circuits designed to amplify input signals in the 0.1-to 1.0-V range, RF power levels as large as -15 to + 5 dBm may be required to cause RHI susceptibility problems. For op-amp circuits designed to amplify input signals in the 1-to 10-mV range, RF power levels as low as -55 to -35 dBm may cause RHI susceptibility problems.
Keywords :
Analog integrated circuits; Computer aided analysis; Integrated circuit modeling; Operational amplifiers; Predictive models; RF signals; Radio frequency; Radiofrequency amplifiers; Radiofrequency interference; Signal design;
Journal_Title :
Electromagnetic Compatibility, IEEE Transactions on
DOI :
10.1109/TEMC.1979.303770