DocumentCode :
1107752
Title :
Investigation of MOS capacitors with thin ZrO2 layers and various gate materials for advanced DRAM applications
Author :
Shappir, Joseph ; Anis, Ayal ; Pinsky, Ida
Author_Institution :
The Hebrew University of Jerusalem, Jerusalem, Israel
Volume :
33
Issue :
4
fYear :
1986
fDate :
4/1/1986 12:00:00 AM
Firstpage :
442
Lastpage :
449
Abstract :
Thin ZrO2 layers were used to realize MOS capacitors with aluminum, polysilicon, and molybdenum gate electrodes. The layers, 300-600 Å in thickness, were obtained by metal organic chemical vapor deposition. The effects of various high-temperature treatments as well as gate material deposition conditions on the MOS capacitor properties were studied. Processing conditions compatible with standard silicon technology were established to obtain capacitors suitable for advanced DRAM application. Relative dielectric constant ∈ ≥ 16, breakdown field 
MV/cm, and leakage currents at applied voltage of 5V around 10-8A/cm2enable the realization of capacitors with dielectric layer equivalent to 35 Å of SiO2 .
MV/cm, and leakage currents at applied voltage of 5V around 10-8A/cm2enable the realization of capacitors with dielectric layer equivalent to 35 Å of SiOKeywords :
Aluminum; Breakdown voltage; Chemical technology; Chemical vapor deposition; Dielectric materials; Electrodes; MOS capacitors; Organic chemicals; Random access memory; Silicon;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1986.22510
Filename :
1485727
Link To Document :
