Title :
Computer modeling and comparison of different rectifier (M-S, M-S-M, p-n-n+) diodes
Author :
Masszi, Ferenc ; Tove, Per-Arne ; Bohlin, Kjell ; Norde, Herman
Author_Institution :
Uppsala University, Uppsala, Sweden
fDate :
4/1/1986 12:00:00 AM
Abstract :
A computer method is used to investigate the forward characteristics of high-barrier Schottky diodes with different back contacts. A discussion of rectifier-parameter optimization is presented, together with comparisons of different diode types, including p-n-n+diodes. The superiority, in certain voltage ranges, of the high-barrier Schottky diodes over p-n-n+diodes is demonstrated.
Keywords :
Helium; Low voltage; Ohmic contacts; P-n junctions; Quasi-doping; Rectifiers; Schottky barriers; Schottky diodes; Semiconductor device doping; Semiconductor diodes;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1986.22514
