• DocumentCode
    1107826
  • Title

    Sensitivity of dynamic MOS flip-flop sense amplifiers

  • Author

    Natori, Kenji

  • Author_Institution
    Toshiba Corporation, Kawasaki, Kanagawa, Japan
  • Volume
    33
  • Issue
    4
  • fYear
    1986
  • fDate
    4/1/1986 12:00:00 AM
  • Firstpage
    482
  • Lastpage
    488
  • Abstract
    An approximate analytic expression for the sensitivity of a dynamic flip-flop sense amplifier is derived. The calculation includes the imbalance of the flip-flop, and the approximate solution is given by means of Lynch and Boll´s method. The sensitivity, which is defined by the minimum difference in input voltages, consists of two terms; one is the center voltage deviation, which is characterized by the imbalance of the device parameters, and the other is the insensitivity-width term, which greatly depends on the choice of circuit parameters. In normal highly sensitive sense amplifiers used in dynamic memories, the insensitivity-width term can be sufficiently small and the sensitivity is dominated by the imbalance of device parameters such as threshold voltages, conductances, and capacitances.
  • Keywords
    Capacitance; Circuits; Computer simulation; DRAM chips; Flip-flops; Operational amplifiers; Paper technology; Random access memory; Threshold voltage; Transient analysis;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1986.22516
  • Filename
    1485733