DocumentCode :
1107826
Title :
Sensitivity of dynamic MOS flip-flop sense amplifiers
Author :
Natori, Kenji
Author_Institution :
Toshiba Corporation, Kawasaki, Kanagawa, Japan
Volume :
33
Issue :
4
fYear :
1986
fDate :
4/1/1986 12:00:00 AM
Firstpage :
482
Lastpage :
488
Abstract :
An approximate analytic expression for the sensitivity of a dynamic flip-flop sense amplifier is derived. The calculation includes the imbalance of the flip-flop, and the approximate solution is given by means of Lynch and Boll´s method. The sensitivity, which is defined by the minimum difference in input voltages, consists of two terms; one is the center voltage deviation, which is characterized by the imbalance of the device parameters, and the other is the insensitivity-width term, which greatly depends on the choice of circuit parameters. In normal highly sensitive sense amplifiers used in dynamic memories, the insensitivity-width term can be sufficiently small and the sensitivity is dominated by the imbalance of device parameters such as threshold voltages, conductances, and capacitances.
Keywords :
Capacitance; Circuits; Computer simulation; DRAM chips; Flip-flops; Operational amplifiers; Paper technology; Random access memory; Threshold voltage; Transient analysis;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1986.22516
Filename :
1485733
Link To Document :
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