1.3-μm GaInAsP/InP buried-ridge-structure laser and its monolithic integration with photodetector using reactive ion beam etching

Author

Bouadma, N. ; Semo, J.

Author_Institution

Lab. de Bagneux, CNET, France

Volume

12

Issue

5

fYear

1994

fDate

5/1/1994 12:00:00 AM

Firstpage

742

Lastpage

748

Abstract

A 1.3 μm GaInAs/InP BRS laser is monolithically integrated with a photodiode. reactive ion beam etching technique (RIBE) is used for the realization of the laser mesa stripe and for the separation of the laser and the photodetector sections. Influence of the laser-detector gap width, the detector facet inclination, and the laser beam waist on the coupling efficiency between LD and PD are discussed theoretically and experimentally. Coupling efficiency as high as 50 μA/mW is obtained by optimizing the structure. A packaged pigtailed integrated LD-PD is realized, in which the signal emitted from the rear laser facet is detected by the integrated photodiode and used to stabilize the laser output power, through a hybrid feedback circuit, to within 0.1% over 55°C temperature range

Keywords

III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; photodiodes; semiconductor lasers; 1.3 mum; GaInAsP-InP; GaInAsP/InP; buried-ridge-structure laser; coupling efficiency; detector facet inclination; hybrid feedback circuit; integrated optoelectronics; integrated photodiode; laser beam waist; laser mesa stripe; laser output power; laser-detector gap width; monolithic integration; packaged pigtailed integrated LD-PD; photodetector; photodiode; reactive ion beam etching; reactive ion beam etching technique; rear laser facet; temperature range; Etching; Face detection; Indium phosphide; Ion beams; Laser feedback; Laser stability; Laser theory; Photodetectors; Photodiodes; Power lasers;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.293963

Filename

293963