• DocumentCode
    1107850
  • Title

    Effect of applied electric field on the buildup and decay of photorefractive gratings

  • Author

    Jonathan, Jean-Michel C. ; Hellwarth, Robert W. ; Roosen, Gérald

  • Author_Institution
    Institut d´´Optique, Centre Universitaire d´´Orsay, France
  • Volume
    22
  • Issue
    10
  • fYear
    1986
  • fDate
    10/1/1986 12:00:00 AM
  • Firstpage
    1936
  • Lastpage
    1941
  • Abstract
    We have measured the real and imaginary parts of the experimental rate constant of the buildup and decay of photorefractive charge gratings in cubic crystalline insulating Bi12SiO20, in the presence of an externally applied voltage. The value of the resulting field in the crystal was monitored using the crystal´s own electrooptic effect. We found agreement over our entire range of fields (0-3 kV/cm) with the predictions of Kukhtarev who postulated that electrons are optically excited from a single species of trap to a single conduction band where they drift and diffuse before experiencing direct recombination to an empty trap. At the higher fields, the expected slowing of the writing and erasure processes by a factor of 20 was observed.
  • Keywords
    Bismuth materials/devices; Optical diffraction gratings; Optical radiation effects; Optical refraction; Bismuth; Charge carrier processes; Charge measurement; Crystallization; Current measurement; Electron traps; Gratings; Insulation; Photorefractive effect; Photorefractive materials;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1986.1072900
  • Filename
    1072900