DocumentCode
1107850
Title
Effect of applied electric field on the buildup and decay of photorefractive gratings
Author
Jonathan, Jean-Michel C. ; Hellwarth, Robert W. ; Roosen, Gérald
Author_Institution
Institut d´´Optique, Centre Universitaire d´´Orsay, France
Volume
22
Issue
10
fYear
1986
fDate
10/1/1986 12:00:00 AM
Firstpage
1936
Lastpage
1941
Abstract
We have measured the real and imaginary parts of the experimental rate constant of the buildup and decay of photorefractive charge gratings in cubic crystalline insulating Bi12 SiO20 , in the presence of an externally applied voltage. The value of the resulting field in the crystal was monitored using the crystal´s own electrooptic effect. We found agreement over our entire range of fields (0-3 kV/cm) with the predictions of Kukhtarev who postulated that electrons are optically excited from a single species of trap to a single conduction band where they drift and diffuse before experiencing direct recombination to an empty trap. At the higher fields, the expected slowing of the writing and erasure processes by a factor of 20 was observed.
Keywords
Bismuth materials/devices; Optical diffraction gratings; Optical radiation effects; Optical refraction; Bismuth; Charge carrier processes; Charge measurement; Crystallization; Current measurement; Electron traps; Gratings; Insulation; Photorefractive effect; Photorefractive materials;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1986.1072900
Filename
1072900
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