DocumentCode :
1107850
Title :
Effect of applied electric field on the buildup and decay of photorefractive gratings
Author :
Jonathan, Jean-Michel C. ; Hellwarth, Robert W. ; Roosen, Gérald
Author_Institution :
Institut d´´Optique, Centre Universitaire d´´Orsay, France
Volume :
22
Issue :
10
fYear :
1986
fDate :
10/1/1986 12:00:00 AM
Firstpage :
1936
Lastpage :
1941
Abstract :
We have measured the real and imaginary parts of the experimental rate constant of the buildup and decay of photorefractive charge gratings in cubic crystalline insulating Bi12SiO20, in the presence of an externally applied voltage. The value of the resulting field in the crystal was monitored using the crystal´s own electrooptic effect. We found agreement over our entire range of fields (0-3 kV/cm) with the predictions of Kukhtarev who postulated that electrons are optically excited from a single species of trap to a single conduction band where they drift and diffuse before experiencing direct recombination to an empty trap. At the higher fields, the expected slowing of the writing and erasure processes by a factor of 20 was observed.
Keywords :
Bismuth materials/devices; Optical diffraction gratings; Optical radiation effects; Optical refraction; Bismuth; Charge carrier processes; Charge measurement; Crystallization; Current measurement; Electron traps; Gratings; Insulation; Photorefractive effect; Photorefractive materials;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1986.1072900
Filename :
1072900
Link To Document :
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