• DocumentCode
    1107851
  • Title

    Resonant-microbridge vapor sensor

  • Author

    Howe, Roger T. ; Muller, Richard S.

  • Volume
    33
  • Issue
    4
  • fYear
    1986
  • fDate
    4/1/1986 12:00:00 AM
  • Firstpage
    499
  • Lastpage
    506
  • Abstract
    A novel integrated vapor sensor is described that incorporates a polycrystalline silicon microbridge coated with a thin polymer film. The microbridge is resonated electrostatically and its vibration is detected capacitively using an integrated NMOS circuit. Vapor uptake by the polymer increases the mass-loading on the microbridge, thereby perturbing the first resonant frequency of the microbridge. In the prototype device, a 150-nm-thick layer of negative photoresist coats a 153-µm-long 1.35-µm-thick polycrystalline silicon microbridge. The phase between the excitation and output voltages at resonance is monitored as the sensor output signal. Exposure to saturated xylene vapor produces a phase shift of -8° with a response time of less than 7 min.
  • Keywords
    Circuits; MOS devices; Polymer films; Prototypes; Resists; Resonance; Resonant frequency; Sensor phenomena and characterization; Silicon; Thin film sensors;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1986.22519
  • Filename
    1485736