A low-loss high-speed switching device: The 2500-V 300-A static induction thyristor

An anode-emitter shorted-type 2500-V 300-A buried-gate static induction (SI) thyristor was fabricated and resulted in a very-high-speed turn-on time of 2.0 µs and a turn-off time of 3.1 µs, both at 1000 A, and in very low-loss performance due to the reduction of the tailing current. The switching loss and the conduction loss of the high-power SI thyristor is for the first time evaluated in this paper. Snubber-circuitless operation is demonstrated for the first time for the high-power SI thyristor.