DocumentCode
1107863
Title
A low-loss high-speed switching device: The 2500-V 300-A static induction thyristor
Author
Nishizawa, Jun-ichi ; Muraoka, Kimihiro ; Kawamura, Yutaka ; Tamamushi, Takashige
Author_Institution
Tohoku University, Sendai, Japan
Volume
33
Issue
4
fYear
1986
fDate
4/1/1986 12:00:00 AM
Firstpage
507
Lastpage
515
Abstract
An anode-emitter shorted-type 2500-V 300-A buried-gate static induction (SI) thyristor was fabricated and resulted in a very-high-speed turn-on time of 2.0 µs and a turn-off time of 3.1 µs, both at 1000 A, and in very low-loss performance due to the reduction of the tailing current. The switching loss and the conduction loss of the high-power SI thyristor is for the first time evaluated in this paper. Snubber-circuitless operation is demonstrated for the first time for the high-power SI thyristor.
Keywords
Anodes; Breakdown voltage; Electrostatic induction; Electrostatic measurements; Helium; Loss measurement; P-i-n diodes; Switches; Switching loss; Thyristors;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1986.22520
Filename
1485737
Link To Document