DocumentCode :
1107916
Title :
Comments on "A theory of the Hooge parameters of solid-state devices"
Author :
Black, R.D.
Author_Institution :
General Electric Corporate Research and Development, Schenectady, NY
Volume :
33
Issue :
4
fYear :
1986
fDate :
4/1/1986 12:00:00 AM
Firstpage :
532
Lastpage :
533
Abstract :
Handel\´s "quantum theory of 
noise" (Q.T.) was developed in the above paper in an ambitious attempt to explain the ubiquity of noise [1]-[3]. The theory has been used to derive the Hooge equation [4], which in turn has been used for many years now in analyses of experimental data (e.g., [5], [6]). The purpose of this comment is to point out serious flaws in Q.T. and to list recent empirical results which are not explained by the Hooge formula or any of its revisions.
noise" (Q.T.) was developed in the above paper in an ambitious attempt to explain the ubiquity of noise [1]-[3]. The theory has been used to derive the Hooge equation [4], which in turn has been used for many years now in analyses of experimental data (e.g., [5], [6]). The purpose of this comment is to point out serious flaws in Q.T. and to list recent empirical results which are not explained by the Hooge formula or any of its revisions.fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1986.22524
Filename :
1485741
Link To Document :
