A Taylor-Galerkin finite element method for the hydrodynamic semiconductor equations

Author

Bova, Steven ; Carey, Graham F.

Author_Institution

Dept. of Aerosp. Eng. & Eng. Mech., Texas Univ., Austin, TX, USA

Volume

14

Issue

12

fYear

1995

fDate

12/1/1995 12:00:00 AM

Firstpage

1437

Lastpage

1444

Abstract

A new Taylor-Galerkin finite element method and adaptive, time-iterative scheme are developed for simulating single-carrier submicron-scale semiconductor device transport with the hydrodynamic model under the assumptions of parabolic energy bands. Boundary conditions are applied using characteristic projections. Numerical studies are conducted to investigate the sensitivity of the given model to some of the parameters contained in typical heat flux and relaxation time models for a one-dimensional, representative test problem

Keywords

Galerkin method; finite element analysis; iterative methods; semiconductor device models; Taylor-Galerkin finite element method; adaptive time-iterative method; boundary conditions; characteristic projections; heat flux; hydrodynamic model; one-dimensional equations; parabolic energy bands; relaxation time; simulation; single-carrier submicron-scale semiconductor device transport; Boundary conditions; Charge carriers; Equations; Finite element methods; Helium; High definition video; Hydrodynamics; Semiconductor devices; Testing; Thermal conductivity;

fLanguage

English

Journal_Title

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0278-0070

Type

jour

DOI

10.1109/43.476574

Filename

476574