Correlation between low-frequency noise and low-temperature performance of two-dimensional electron gas FET´s

We report here on low-frequency (LF) noise of GaAs/ GaAlAs TEGFET´s. Present investigations show that this noise is not inherently lower in TEGFET´s than in MESFET´s. Moreover, the bias and frequency dependence of the noise was found to indicate that traps in GaAlAs have a fundamental influence on LF noise. A close correlation is subsequently observed between the noise level at ambient temperature and the TEGFET static and dynamic performances at low temperature (130 K).