DocumentCode
1108045
Title
Correlation between low-frequency noise and low-temperature performance of two-dimensional electron gas FET´s
Author
Dieudonne, Jean-Marie ; Pouysegur, Michel ; Graffeuil, J. ; Cazaux, Jean-Louis
Author_Institution
Laboratoire d´´Automatique et d´´Analyse des Systemes du Centre National de la Recherche Scientifique, Toulouse Cedex, France
Volume
33
Issue
5
fYear
1986
fDate
5/1/1986 12:00:00 AM
Firstpage
572
Lastpage
575
Abstract
We report here on low-frequency (LF) noise of GaAs/ GaAlAs TEGFET´s. Present investigations show that this noise is not inherently lower in TEGFET´s than in MESFET´s. Moreover, the bias and frequency dependence of the noise was found to indicate that traps in GaAlAs have a fundamental influence on LF noise. A close correlation is subsequently observed between the noise level at ambient temperature and the TEGFET static and dynamic performances at low temperature (130 K).
Keywords
Electron traps; FETs; Frequency dependence; Gallium arsenide; HEMTs; Low-frequency noise; MESFETs; MODFETs; Noise level; Temperature;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1986.22534
Filename
1485751
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