• DocumentCode
    1108085
  • Title

    Design of TEGFET devices for optimum low-noise high-frequency operation

  • Author

    Jay, Paul R. ; Derewonko, Henri ; Adam, Didier ; Briere, Pierre ; Delagebeaudeuf, Daniel ; Delescluse, Philipe ; Rochette, Jean-francois

  • Author_Institution
    BNR, Ottawa, Ontario, Canada
  • Volume
    33
  • Issue
    5
  • fYear
    1986
  • fDate
    5/1/1986 12:00:00 AM
  • Firstpage
    590
  • Lastpage
    594
  • Abstract
    In the context of applications requiring high gain and minimal noise at microwave and millimeter-wave frequencies, the optimization of a number of interrelated structural and electrical parameters is necessary. This paper discusses the relative importance of these parameters in the design of TEGFET devices and their influence on the considerations necessary far wideband LNA design. The discussion is illustrated with recent microwave data obtained with millimeter-wave TEGFET devices.
  • Keywords
    Equations; Equivalent circuits; Frequency; Gallium arsenide; HEMTs; MODFETs; Microwave devices; Microwave transistors; Millimeter wave transistors; Molecular beam epitaxial growth;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1986.22537
  • Filename
    1485754
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1108085