Design of TEGFET devices for optimum low-noise high-frequency operation

In the context of applications requiring high gain and minimal noise at microwave and millimeter-wave frequencies, the optimization of a number of interrelated structural and electrical parameters is necessary. This paper discusses the relative importance of these parameters in the design of TEGFET devices and their influence on the considerations necessary far wideband LNA design. The discussion is illustrated with recent microwave data obtained with millimeter-wave TEGFET devices.