Title :
67% CW power conversion efficiency from Al-free 1060 nm emitting diode lasers
Author :
Cai, J. ; Kanskar, M.
Author_Institution :
Alfalight Inc., Madison, WI
Abstract :
1060 nm emitting broad-waveguide-type aluminium-free diode lasers have been optimised for maximum power conversion efficiency (PCE). PCE at 67% is achieved at continuous-wave operation and 25degC heatsink temperature from a 1 mm cavity length, 100 mum stripe diode laser. The improvement is mainly the result of an increase in injection efficiency via optimisation of the bandgap structure, and reductions in operating voltage via doping optimisation of the broad-waveguide structure.
Keywords :
III-V semiconductors; energy gap; gallium arsenide; indium compounds; laser cavity resonators; quantum well lasers; CW power conversion efficiency; InGaAs-GaAs; bandgap structure optimisation; broad-waveguide structure; broad-waveguide-type aluminium-free emitting diode lasers; cavity length; continuous-wave operation; doping optimisation; heatsink temperature; injection efficiency; operating voltage; power conversion efficiency; size 1 mm; size 100 mum; stripe diode laser; temperature 25 degC; wavelength 1060 nm;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2009.0920
