DocumentCode
1108157
Title
67% CW power conversion efficiency from Al-free 1060 nm emitting diode lasers
Author
Cai, J. ; Kanskar, M.
Author_Institution
Alfalight Inc., Madison, WI
Volume
45
Issue
13
fYear
2009
Firstpage
680
Lastpage
681
Abstract
1060 nm emitting broad-waveguide-type aluminium-free diode lasers have been optimised for maximum power conversion efficiency (PCE). PCE at 67% is achieved at continuous-wave operation and 25degC heatsink temperature from a 1 mm cavity length, 100 mum stripe diode laser. The improvement is mainly the result of an increase in injection efficiency via optimisation of the bandgap structure, and reductions in operating voltage via doping optimisation of the broad-waveguide structure.
Keywords
III-V semiconductors; energy gap; gallium arsenide; indium compounds; laser cavity resonators; quantum well lasers; CW power conversion efficiency; InGaAs-GaAs; bandgap structure optimisation; broad-waveguide structure; broad-waveguide-type aluminium-free emitting diode lasers; cavity length; continuous-wave operation; doping optimisation; heatsink temperature; injection efficiency; operating voltage; power conversion efficiency; size 1 mm; size 100 mum; stripe diode laser; temperature 25 degC; wavelength 1060 nm;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2009.0920
Filename
5117390
Link To Document