• DocumentCode
    1108165
  • Title

    GaAs0.7Sb0.3/GaAs type-II quantum-well laser with adjacent InAs quantum-dot layer

  • Author

    Lin, Y.R. ; Lin, H.H. ; Chu, J.H.

  • Author_Institution
    Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei
  • Volume
    45
  • Issue
    13
  • fYear
    2009
  • Firstpage
    682
  • Lastpage
    683
  • Abstract
    A GaAs0.7Sb0.3/GaAs type-II quantum-well laser with a InAs quantum-dot (QD) layer adjacent to the well is reported. The laser shows much lower threshold current density, lower internal loss and higher characteristic temperature than the device without adjacent QDs. The better performances are attributed to additional dimensional confinement, resulting from a spatial potential fluctuation induced by the adjacent QDs, for carriers in the active region of the laser.
  • Keywords
    III-V semiconductors; current density; gallium arsenide; gallium compounds; indium compounds; laser beams; quantum well lasers; semiconductor quantum dots; GaAs0.7Sb0.3-GaAs; InAs; current density; differential quantum efficiency; self-assembled quantum-dot layer; spatial potential fluctuation; type-II quantum-well laser;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2009.1243
  • Filename
    5117391
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1108165