DocumentCode :
1108222
Title :
A model for the current—Voltage characteristics of MODFET´s
Author :
Park, Kwangmean ; Kwack, Kae Dal
Author_Institution :
Hanyang University, Seoul, Korea
Volume :
33
Issue :
5
fYear :
1986
fDate :
5/1/1986 12:00:00 AM
Firstpage :
673
Lastpage :
676
Abstract :
A model for the 
characteristics of MODFET\´s is presented. In this paper, an analytic velocity-field model is used. To more accurately describe the physical characteristics of MODFET\´s, the model of this paper is divided into two regions (the linear region and the saturation region), being continuous at the pinchoff voltage, and includes the diffusion component in addition to the drift component of current. Using this model, the simulated characteristics are in excellent agreement with the experimental data.
characteristics of MODFET\´s is presented. In this paper, an analytic velocity-field model is used. To more accurately describe the physical characteristics of MODFET\´s, the model of this paper is divided into two regions (the linear region and the saturation region), being continuous at the pinchoff voltage, and includes the diffusion component in addition to the drift component of current. Using this model, the simulated characteristics are in excellent agreement with the experimental data.Keywords :
Computer aided analysis; Electrodes; Electrons; Epitaxial layers; Gallium arsenide; HEMTs; MODFETs; Potential well; Semiconductor devices; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1986.22550
Filename :
1485767
Link To Document :
