Title :
Effect of shallow and deep donors on the equilibrium electron density of the two-dimensional electron gas in a modulation-doped field-effect transistor
Author :
Subramanian, Sivaramakrishna ; Vengurlekar, A.S. ; Diwan, Ajit A.
Author_Institution :
Tata Institute of Fundamental Research, Bombay, India
fDate :
5/1/1986 12:00:00 AM
Abstract :
A model to calculate the equilibrium electron density of the two-dimensional electron gas in a modulation-doped field-effect transistor that takes into account the simultaneous presence of both shallow and deep donors in the Si-doped AlGaAs is presented. The results of our calculation are compared with earlier theoretical and experimental results.
Keywords :
Circuit noise; Digital circuits; Doping; Electrons; Epitaxial layers; FETs; Gallium arsenide; HEMTs; Ionization; MODFET circuits;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1986.22555
