Title :
Hot-carrier degradation of LDD MOSFET´s with gate oxynitride grown in N/sub 2/O
Author :
Okada, Yoshio ; Tobin, Philip J.
Author_Institution :
Adv. Products Res. & Dev. Lab., Motorola Inc., Austin, TX, USA
fDate :
7/1/1994 12:00:00 AM
Abstract :
Hot carrier immunity (HCI) of single drain (SD) and lightly doped drain (LDD) n-MOSFET´s with gate oxide and N/sub 2/O gate oxynitride was compared. Gate oxynitride shows better HCI than gate oxide in SD devices but comparable in LDD devices. We show that oxide grown during the poly-silicon oxidation process after gate poly-silicon definition plays an important role in determining the hot carrier resistance of LDD n-MOSFET´s with N/sub 2/O gate oxynitride.<>
Keywords :
hot carriers; insulated gate field effect transistors; LDD MOSFET; N/sub 2/O; NMOSFET; Si-SiNO; gate oxynitride; hot carrier resistance; hot-carrier degradation; lightly doped drain; n-MOSFETs; polysilicon oxidation process; Degradation; Dielectrics; Furnaces; Hot carriers; Human computer interaction; MOSFET circuits; Oxidation; Stress; Transconductance; Voltage;
Journal_Title :
Electron Device Letters, IEEE
