DocumentCode
1108352
Title
Hot-carrier degradation of LDD MOSFET´s with gate oxynitride grown in N/sub 2/O
Author
Okada, Yoshio ; Tobin, Philip J.
Author_Institution
Adv. Products Res. & Dev. Lab., Motorola Inc., Austin, TX, USA
Volume
15
Issue
7
fYear
1994
fDate
7/1/1994 12:00:00 AM
Firstpage
233
Lastpage
235
Abstract
Hot carrier immunity (HCI) of single drain (SD) and lightly doped drain (LDD) n-MOSFET´s with gate oxide and N/sub 2/O gate oxynitride was compared. Gate oxynitride shows better HCI than gate oxide in SD devices but comparable in LDD devices. We show that oxide grown during the poly-silicon oxidation process after gate poly-silicon definition plays an important role in determining the hot carrier resistance of LDD n-MOSFET´s with N/sub 2/O gate oxynitride.<>
Keywords
hot carriers; insulated gate field effect transistors; LDD MOSFET; N/sub 2/O; NMOSFET; Si-SiNO; gate oxynitride; hot carrier resistance; hot-carrier degradation; lightly doped drain; n-MOSFETs; polysilicon oxidation process; Degradation; Dielectrics; Furnaces; Hot carriers; Human computer interaction; MOSFET circuits; Oxidation; Stress; Transconductance; Voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.294080
Filename
294080
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