Title :
Novel resonant tunneling transistor with high transconductance at room temperature
Author :
Peatman, W.C.B. ; Brown, E.R. ; Rooks, M.J. ; Maki, P. ; Grimm, W.J. ; Shur, M.
Author_Institution :
Dept. of Electr. Eng., Virginia Univ., Charlottesville, VA, USA
fDate :
7/1/1994 12:00:00 AM
Abstract :
A resonant tunneling transistor (RTT) utilizing a novel heterodimensional Schottky gate technology is described. The gate is formed by electroplating Pt/Au onto the side of an AlGaAs/GaAs double barrier structure. The gate voltage modulates the drain current by modulating the area of the quasi-two dimensional electron accumulation layer which forms above the source barrier under drain-source bias. Room temperature transistor characteristics included a peak current of 225 mA/mm and peak transconductance of 218 mS/mm. The ultrafine fabrication process is also discussed.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; aluminium compounds; gallium arsenide; resonant tunnelling devices; 218 mS/mm; Pt-Au-AlGaAs-GaAs; RTT; double barrier structure; drain-source bias; electroplating; heterodimensional Schottky gate technology; high transconductance; quasi-two dimensional electron accumulation layer; resonant tunneling transistor; room temperature; ultrafine fabrication process; Electrons; Etching; Gallium arsenide; Gold; Lithography; Resonant tunneling devices; Schottky barriers; Temperature; Transconductance; Voltage;
Journal_Title :
Electron Device Letters, IEEE
