Noise performance of low power 0.25 micron gate ion implanted D-mode GaAs MESFET for wireless applications

Author

Apostolakis, P.J. ; Middleton, J.R. ; Scherrer, D. ; Feng, M. ; Lepore, A.N.

Author_Institution

Center for Compound Semicond. Microelectron., Illinois Univ., Urbana, IL, USA

Volume

15

Issue

7

fYear

1994

fDate

7/1/1994 12:00:00 AM

Firstpage

239

Lastpage

241

Abstract

We report on the noise performance of low power 0.25 μm gate ion implanted D-mode GaAs MESFETs suitable for wireless personal communication applications. The 0.25 μm×200 μm D-mode MESFET has a f_T of 18 GHz and f_max of 33 GHz at a power level of 1 mW (power density of 5 mW/mm). The noise characteristics at 4 GHz for the D-mode MESFET are F_min=0.65 dB and G/sub assoc/=13 dB at 1 mW. These results demonstrate that the GaAs D-mode MESFET is also an excellent choice for low power personal communication applications.

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; ion implantation; semiconductor device noise; solid-state microwave devices; 0.25 micron; 0.65 dB; 1 mW; 13 dB; 18 GHz; 33 GHz; 4 GHz; GaAs; ion implanted D-mode MESFET; low power device; noise performance; submicron gate; wireless personal communication applications; Costs; Gain; Gallium arsenide; Integrated circuit noise; Low-noise amplifiers; MESFETs; MMICs; Noise figure; Power dissipation; Semiconductor device noise;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.294082

Filename

294082