Title :
A low-barrier Schottky process using MoSi2
Author :
Kapoor, Ashok K. ; Thomas, Michael E. ; Vora, Madhukar B.
Author_Institution :
Fairchild Research Center, Palo Alto, CA
fDate :
6/1/1986 12:00:00 AM
Abstract :
A technology to produce low-barrier MoSi2Schottky diodes for use in LSI bipolar circuits has been developed. Molybdenum disilicide is formed on single-crystal silicon by a self-aligned process under extremely clean conditions. Auger electron spectroscopy (AES) and infrared (IR) absorption techniques are used extensively to monitor the formation and thickness of MoSi2films. Capacitance-voltage and current-voltage measurements at varying temperatures are employed to characterize the Schottky barrier, which has a measured potential of 0.66 eV.
Keywords :
Capacitance measurement; Circuits; Current measurement; Electrons; Infrared spectra; Large scale integration; Schottky diodes; Silicon; Spectroscopy; Temperature measurement;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1986.22567
