Sulfide treated GaAs MISFET´s with gate insulator of photo-CVD grown P/sub 3/N/sub 5/ film

Author

Jeong, Yoon-Ha ; Choi, Ki-Hawn ; Jo, Seong-Kue

Author_Institution

Dept. of Electron. & Electr. Eng., Pohang Inst. of Sci. & Technol., South Korea

Volume

15

Issue

7

fYear

1994

fDate

7/1/1994 12:00:00 AM

Firstpage

251

Lastpage

253

Abstract

Sulfide passivated GaAs MISFET´s with the gate insulator of photo-CVD grown P/sub 3/N/sub 5/ films have been successfully fabricated. The device shows the drain current instability less than 22% for the period of 1.0 s /spl sim/1.0/spl times/10/sup 4/ s, due to excellent properties of sulfide treated P/sub 3/N/sub 5//GaAs interface. The effective electron mobility and extrinsic transconductance of the device are about 1300 cm/sup 2//V/spl middot/sec and 1.33 mS, respectively, at room temperature. To estimate the effects of sulfide treatment on P/sub 3/N/sub 5//GaAs interfacial properties, GaAs-MIS diodes are also fabricated.<>

Keywords

CVD coatings; III-V semiconductors; carrier mobility; gallium arsenide; insulated gate field effect transistors; insulating thin films; surface treatment; 1.0 to 1.0E4 s; 293 K; GaAs-P/sub 3/N/sub 5/; III-V semiconductors; MIS diodes; MISFETs; drain current instability; effective electron mobility; extrinsic transconductance; gate insulator; interfacial properties; photo-CVD grown film; sulfide treatment; Annealing; Capacitance-voltage characteristics; Gallium arsenide; Gases; Indium phosphide; Insulation; Semiconductor diodes; Substrates; Temperature measurement; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.294086

Filename

294086