• DocumentCode
    1108424
  • Title

    Corrections to “a three-dimensional simulation study of the performance of carbon nanotube field-effect transistors with doped reservoirs and realistic geometry” [Aug 06 1782-1788]

  • Author

    Fiori, G. ; Iannaccone, Giuseppe ; Klimeck, Gerhard

  • Volume
    55
  • Issue
    4
  • fYear
    2008
  • fDate
    4/1/2008 12:00:00 AM
  • Firstpage
    1094
  • Lastpage
    1095
  • Abstract
    In the above titled paper (ibid., vol. 53, no. 8, pp. 1782-1788, Aug 06), there are some errors in the results. This errata corrects Figs. 5-11, and 13 of the original paper and adds Fig. 14.
  • Keywords
    CNTFETs; Carbon nanotubes; Cutoff frequency; Degradation; Delay; Performance evaluation; Reservoirs; Solid modeling; Testing; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2008.917329
  • Filename
    4475400