Application of the difference subthreshold swing analysis to study generation of interface traps in MOS structures due to Fowler-Nordheim aging

Author

Tan, Changhua ; Xu, Mingzhen ; Wang, Yangyuan

Author_Institution

Dept. of Comput. Sci. & Technol., Beijing Univ., China

Volume

15

Issue

7

fYear

1994

fDate

7/1/1994 12:00:00 AM

Firstpage

257

Lastpage

259

Abstract

Peaks in difference subthreshold swing relaxation defined as a function of the electron fluence yield generation cross sections and the densities of generated interface traps. The simple mathematical theorem, on which our measurements depend, has been proven experimentally. This technique has the advantage of being direct, fast and convenient; it is appropriate for the study of complex interface trap generation phenomena. The experiment shows that the interface traps generated consist of two kinds with different generation cross sections under high field stresses.<>

Keywords

electron traps; electronic density of states; high field effects; insulated gate field effect transistors; interface electron states; metal-insulator-semiconductor structures; tunnelling; Fowler-Nordheim aging; MOS structures; difference subthreshold swing analysis; electron fluence; generation cross sections; high field stresses; interface traps; trap densities; Aging; Character generation; Decision support systems; Degradation; Electron traps; Semiconductor device reliability; Stress; Tunneling; Very large scale integration;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.294088

Filename

294088