Title :
Application of the difference subthreshold swing analysis to study generation of interface traps in MOS structures due to Fowler-Nordheim aging
Author :
Tan, Changhua ; Xu, Mingzhen ; Wang, Yangyuan
Author_Institution :
Dept. of Comput. Sci. & Technol., Beijing Univ., China
fDate :
7/1/1994 12:00:00 AM
Abstract :
Peaks in difference subthreshold swing relaxation defined as a function of the electron fluence yield generation cross sections and the densities of generated interface traps. The simple mathematical theorem, on which our measurements depend, has been proven experimentally. This technique has the advantage of being direct, fast and convenient; it is appropriate for the study of complex interface trap generation phenomena. The experiment shows that the interface traps generated consist of two kinds with different generation cross sections under high field stresses.<>
Keywords :
electron traps; electronic density of states; high field effects; insulated gate field effect transistors; interface electron states; metal-insulator-semiconductor structures; tunnelling; Fowler-Nordheim aging; MOS structures; difference subthreshold swing analysis; electron fluence; generation cross sections; high field stresses; interface traps; trap densities; Aging; Character generation; Decision support systems; Degradation; Electron traps; Semiconductor device reliability; Stress; Tunneling; Very large scale integration;
Journal_Title :
Electron Device Letters, IEEE
