• DocumentCode
    1108537
  • Title

    High-mobility FET in strained silicon

  • Author

    Keyes, Robert W.

  • Author_Institution
    IBM Corporation, Thomas J. Watson Research Center, Yorktown Heights, NY
  • Volume
    33
  • Issue
    6
  • fYear
    1986
  • fDate
    6/1/1986 12:00:00 AM
  • Firstpage
    863
  • Lastpage
    863
  • Abstract
    Suitably strained silicon exhibits a mobility anisotropy that can be used to advantage in field-effect transistors. The desired strain can be achieved through heteroepitaxy.
  • Keywords
    Anisotropic magnetoresistance; Capacitive sensors; Electron mobility; FETs; Lattices; Piezoresistance; Scattering; Silicon; Substrates; Tensile stress;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1986.22579
  • Filename
    1485796
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1108537