Title :
Screening in Ultrashort (5 nm) Channel MoS2 Transistors: A Full-Band Quantum Transport Study
Author :
Mishra, Varun ; Smith, Samuel ; Lei Liu ; Zahid, Ferdows ; Yu Zhu ; Hong Guo ; Salahuddin, Sayeef
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California at Berkeley, Berkeley, CA, USA
Abstract :
Full-band ballistic quantum transport calculations were used to study the screening effects in ultrashort-channel few-layer MoS2 transistors. A large density of states resulted in small screening lengths while inhibiting direct source-to-drain tunneling. Short-channel effects were observed even for the structurally confined 2-D transistors resulting in degraded electrostatic control. Electron confinement effects were also observed in the OFF-state in multilayered devices.
Keywords :
ballistic transport; molybdenum compounds; semiconductor doping; tunnel transistors; 2D transistors; MoS2; density of states; electron confinement effects; electrostatic control; full-band ballistic quantum transport; multilayered devices; short-channel effects; size 5 nm; source-to-drain tunneling; ultrashort channel transistors; Doping; Electric potential; Electrostatics; Logic gates; Performance evaluation; Photonic band gap; Transistors; Dichalcogenide; MoS₂; MoS2; monolayer transistors; nonequilibrium Green's function (NEGF); nonequilibrium Green???s function (NEGF); quantum confinement; quantum confinement.;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2015.2444353
