Title :
A generalized proof of the reciprocity theorem
Author :
Kwark, Y.H. ; Swanson, R.M.
Author_Institution :
Stanford Electronics Laboratories, Stanford, CA
fDate :
6/1/1986 12:00:00 AM
Abstract :
This brief extends the general proof of the Ebers-Moll reciprocity theorem [1] originally presented by Shockley [2] to include time dependence and to device structures where heavy doping effects are significant so long as quasi-neutrality and low-level injection conditions are maintained.
Keywords :
Attenuation; Computational Intelligence Society; Lamps; Light sources; Predictive models; Reflectivity; Semiconductor device modeling; Semiconductor films; Silicon; Temperature dependence;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1986.22581
