DocumentCode :
1108580
Title :
A role of source n-region in LDD MOSFET´s
Author :
Takeda, Eiji ; Shimizu, Akihiro ; Kume, Hitoshi ; Itoh, Kiyoo
Author_Institution :
Hitachi Ltd., Tokyo, Japan
Volume :
33
Issue :
6
fYear :
1986
fDate :
6/1/1986 12:00:00 AM
Firstpage :
869
Lastpage :
870
Abstract :
A new role of source n-region in lightly doped drain (LDD) MOSFET\´s is presented. This is "bipolar action" reduction due to n-source resistance, which determines the drain-sustaining voltage. Also, the n-resistance can be directly measured by using this phenomenon.
Keywords :
Degradation; Electrical resistance measurement; Electrons; Fabrication; Hot carrier effects; Hot carriers; Impurities; Transconductance; Very large scale integration; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1986.22583
Filename :
1485800
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1108580
بازگشت