Title :
NiSi Polysilicon Fuse Reliability in 65-nm Logic CMOS Technology
Author :
Ang, Boon ; Tumakha, Sergey ; Im, Jay ; Paak, Sunhom S.
Author_Institution :
Xilinx Inc., San Jose
fDate :
6/1/2007 12:00:00 AM
Abstract :
The programming characteristics and reliability of NiSi polysilicon fuse fabricated using 65-nm logic complimentary metal-oxide-semiconductor technology were studied. Under optimal programming conditions, high postprogram resistance can be achieved. These well-programmed fuses showed good data retention under unbiased temperature stress test. In order to avoid read disturb of unprogrammed fuses, the read current has to be kept below the threshold for silicide electromigration.
Keywords :
CMOS logic circuits; CMOS memory circuits; electromigration; integrated circuit reliability; nickel compounds; NiSi - Interface; NiSi polysilicon fuse reliability; data retention; logic CMOS technology; logic complimentary metal-oxide-semiconductor technology; optimal programming conditions; postprogram resistance; silicide electromigration; size 65 nm; unbiased temperature stress test; Anodes; CMOS logic circuits; CMOS technology; Cathodes; Fuses; Logic programming; Silicides; Temperature; Testing; Voltage; Data retention; NiSi; efuse; electromigration; fuse; one-time programmable (OTP); read disturb;
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/TDMR.2007.901870
