A Novel Fin Electron–Hole Bilayer Tunnel Field-Effect Transistor

A novel fin electron-hole bilayer tunnel field-effect transistor (FinEHBTFET) is proposed and investigated by simulation. In this structure, a narrow fin is placed at the middle of a conventional p⁺-i-n ⁺ tunnel field-effect transistor, and two separate gates formed on left and right sides of the fin are used to control the channel. The FinEHBTFET achieves drive current when band-to-band tunneling happens between the bias-induced electron-hole bilayer at the two sides of the fin. The FinEHBTFET shows a high I_on/I_off ratio more than 10⁶, and an average SS of 3 mV/dec over three decades of drain current.