Supression of drain conductance transients, drain current oscillations, and low-frequency generation—Recombination noise in GaAs FET´s using buried channels

The drain conductance transients of buried-channel MESFET´s fabricated on GaAs are compared with conductance transients of regular MESFET´s. The buried-channel MESFET´s are shown to be essentially free of drain transients in comparison to the regularly fabricated MESFET´s. In addition, the buried-channel FET´s are shown to be free of oscillations in the drain current, which have been found in FET´s manufactured by common techniques.