Investigation of Potassium Contamination in SOI Wafer Using Dynamic SIMS

Author

Gui, D ; Hua, Y.N. ; Xing, Z.X. ; Zhao, S.P.

Author_Institution

Chartered Semicond. Manuf., Ltd., Singapore

Volume

7

Issue

2

fYear

2007

fDate

6/1/2007 12:00:00 AM

Firstpage

369

Lastpage

372

Abstract

Mobile ions may cause critical failures in integrated circuits. For silicon-on-insulator (SOI) wafers, the mobile ions affect not only the reliability of back end of the line but also the performance of the transistors. This paper presents a case study of potassium (K) contamination in the SOI wafer using dynamic secondary ion mass spectrometry. The results showed that the presence of K in chemical and mechanical polish slurry contaminated the porous interlayer dielectrics (ILD), penetrating below the surface due to their porous structure. The K contamination has been greatly reduced by capping the porous ILD with a high-density-oxide layer.

Keywords

chemical mechanical polishing; contamination; failure analysis; integrated circuit testing; secondary ion mass spectroscopy; silicon-on-insulator; SOI; dynamic secondary ion mass spectrometry; mobile ions; porous interlayer dielectrics; potassium contamination; silicon-on-insulator wafer; Built-in self-test; CMOS technology; Chemicals; Contamination; Dielectrics; Fabrication; Isolation technology; Mass spectroscopy; Silicon on insulator technology; Slurries; Secondary ion mass spectrometry (SIMS); chemical andmechanical polish (CMP); potassium contamination; silicon-on-insulator(SOI); slurry;

fLanguage

English

Journal_Title

Device and Materials Reliability, IEEE Transactions on

Publisher

ieee

ISSN

1530-4388

Type

jour

DOI

10.1109/TDMR.2007.901279

Filename

4295088