DocumentCode
1108724
Title
Injection locking of diode lasers
Author
Hadley, G. Ronald
Author_Institution
Sandia Nat´´l. Labs., Albuquerque, NM, USA
Volume
22
Issue
3
fYear
1986
fDate
3/1/1986 12:00:00 AM
Firstpage
419
Lastpage
426
Abstract
We present a theoretical analysis of the forward and reflected amplitudes in a diode laser oscillator cavity for both a single resonant mode and an injected signal. The analysis includes gain saturation and allows the gain coefficient at the injected frequency to be different from that at the resonant frequency. Analytic solutions for the axially dependent amplitudes are presented for the case of equal gain coefficients. For the more general case, a formula is presented for the intensity necessary for locking, which is shown to reduce in various limits to other expressions previously published. One immediate consequence of the present formalism is that the use of antireflection coatings on the diode end facets should act to reduce the injected signal intensity necessary for locking. In fact, reduction of the reflectivities to values of a few percent should enable locking over the entire gain curve with incident intensities which are small compared to the slave oscillator´s normal output.
Keywords
Injection-locked oscillators; Semiconductor lasers; Diode lasers; Helium; Injection-locked oscillators; Laser beams; Laser mode locking; Reflectivity; Resonance; Resonant frequency; Semiconductor lasers; Signal analysis;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1986.1072979
Filename
1072979
Link To Document