• DocumentCode
    1108757
  • Title

    Influence of Stress-Induced Leakage Current on Reliability of HfSiOx

  • Author

    Jakschik, Stefan ; Kauerauf, Thomas ; Degraeve, Y. ; Hwang, Y.N. ; Duschl, Rainer ; Kerber, Martin ; Avellán, Alejandro ; Kudelka, S.

  • Author_Institution
    Infineon Technol.
  • Volume
    7
  • Issue
    2
  • fYear
    2007
  • fDate
    6/1/2007 12:00:00 AM
  • Firstpage
    310
  • Lastpage
    314
  • Abstract
    HfSiOx with TiN gate is investigated under substrate injection with respect to stress-induced leakage current (SILC). Most damage caused by electrical stress was found in the high- layer and not in the interface to silicon. Dependent on the application, SILC can exhibit several levels of severity. In pure logic circuits, a large area approximation is sufficient. However, for memory applications, the current increase in small area is important as well. Both contributions are investigated, revealing no lifetime-limiting current increase. With an improved deposition process, SILC can even be suppressed.
  • Keywords
    dielectric materials; hafnium compounds; leakage currents; reliability; titanium compounds; HfSiO - System; TiN - Binary; electrical stress; high-k dielectrics; lifetime-limiting current increase; logic circuit; memory application; stress-induced leakage current; substrate injection; Breakdown voltage; Dielectrics; Electron traps; Hafnium oxide; Leakage current; Logic circuits; Microelectronics; Silicon; Stress; Tin; Dielectric; high-$kappa$; reliability;
  • fLanguage
    English
  • Journal_Title
    Device and Materials Reliability, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1530-4388
  • Type

    jour

  • DOI
    10.1109/TDMR.2007.902201
  • Filename
    4295091
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1108757