Title :
Current Instability, Permittivity Variation With Frequency, and Their Relationship in Ta2O5 Capacitor
Author :
Manceau, Jean-Philippe ; Bruyére, Sylvie ; Jeannot, Simon ; Sylvestre, Alain ; Gonon, Patrice
Author_Institution :
STMicroelectron., Crolles
fDate :
6/1/2007 12:00:00 AM
Abstract :
In this paper, Ta2O5 current instability in MIM and MIS capacitors is studied over several sample thicknesses with a current-versus-time measurement and low-frequency dielectric spectroscopy. Three types of phenomena are identified. The first one is attributed to polarization current correlated to flat loss behavior. The second mechanism corresponds to the conduction current identified as a steady state: a unique mechanism, probably a Poole-Frenkel one, is observed on the whole investigated voltage range. Finally, a resistance degradation phenomenon occurs that has been attributed to ionic diffusion in dielectric and follows the space-charge-limited theory. According to physical characterization, a model based on oxygen vacancies migration in the dielectric is suggested. Moreover, according to low-frequency dielectric spectroscopy measurements, it has been identified that the low-frequency loss peak is created by the same defects and is well modeled by the Maxwell-Wagner approach.
Keywords :
MIM devices; MIS capacitors; circuit stability; dielectric relaxation; tantalum compounds; MIM capacitors; MIS capacitors; Maxwell-Wagner approach; Poole-Frenkel one; Ta2O5 - Binary; conduction current; current instability; dielectric relaxation; flat loss behavior; ionic diffusion; low-frequency dielectric spectroscopy; permittivity variation; polarization current; space-charge-limited theory; Current measurement; Dielectric loss measurement; Dielectric measurements; Electrochemical impedance spectroscopy; Frequency; MIM capacitors; Optical polarization; Permittivity measurement; Steady-state; Thickness measurement; Conduction; dielectric relaxation (DR); high- $kappa$ dielectrics; resistance degradation;
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/TDMR.2007.901086