DocumentCode :
1108786
Title :
Postbreakdown Conduction in Ultrathin La2 O3 Gate Dielectrics
Author :
Miranda, Enrique ; Iwai, Hiroshi
Author_Institution :
Univ. Autonoma de Barcelona
Volume :
7
Issue :
2
fYear :
2007
fDate :
6/1/2007 12:00:00 AM
Firstpage :
333
Lastpage :
339
Abstract :
The evolution of the conduction characteristics of ultrathin lanthanum oxide (La2O3) gate dielectrics that are subjected to constant and ramped electrical stresses was investigated. The samples were obtained by the electron-beam evaporation technique and annealed in situ in ultrahigh vacuum conditions to minimize the formation of an interfacial oxide layer. We have shown that the total current flowing through the device consists of two parallel contributions, where one is associated with direct and Fowler-Nordheim tunneling and the other one is associated with multiple breakdown (BD) path conduction. This latter component is sensitive to the applied stress and evolves from soft BD to diodelike conduction as the degradation proceeds. We analyzed the experimental data in terms of two well-known models for post-BD conduction. The importance of considering series and parallel resistances within these formulations is shown.
Keywords :
dielectric materials; electric breakdown; electron beam annealing; evaporation; lanthanum compounds; Fowler-Nordheim tunneling; La2O3 - Binary; diodelike conduction; electrical stresses; electron-beam evaporation technique; interfacial oxide layer; multiple breakdown path conduction; postbreakdown conduction; ultrathin lanthanum oxide gate dielectrics; Annealing; Data analysis; Degradation; Dielectrics; Diodes; Electric breakdown; Lanthanum; Stress; Tunneling; Vacuum technology; Breakdown (BD); MOS; high-$kappa$ ;
fLanguage :
English
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
Publisher :
ieee
ISSN :
1530-4388
Type :
jour
DOI :
10.1109/TDMR.2007.901056
Filename :
4295094
Link To Document :
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