Title :
A New Method to Extract Bulk Carrier Mobility in Germanium-on-Insulator
Author :
Jin, Hai-Yan ; Cheung, Nathan W.
Author_Institution :
Univ. of California, Berkeley
fDate :
5/1/2008 12:00:00 AM
Abstract :
A new method is presented to extract bulk carrier mobility of germanium-on-insulator (GeOI) films based on the data from the depletion mode of four-point probe pseudo-MOSFET measurement. Analytical models of the conductance in depletion region and related parameter extraction procedures are presented. This method is validated with both GeOI and silicon-on-insulator substrates prepared by layer transfer.
Keywords :
MOSFET; carrier mobility; germanium; silicon-on-insulator; bulk carrier mobility; four-point probe pseudo-MOSFET measurement; germanium-on-insulator; layer transfer; parameter extraction procedures; silicon-on-insulator substrates; Contact resistance; Data mining; Dielectric substrates; MOSFET circuits; Plasma applications; Plasma temperature; Probes; Silicon on insulator technology; Voltage; Wafer bonding; Characterization; germanium; germanium-on-insulator (GeOI); measurement; mobility; pseudo-MOSFET; silicon-on-insulator (SOI); unibond;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2008.919301
