DocumentCode
1108885
Title
The use of charge pumping to characterize generation by interface traps
Author
Wachnik, Richard A.
Author_Institution
IBM Thomas J. Watson Research Center, Yorktown Heights, NY
Volume
33
Issue
7
fYear
1986
fDate
7/1/1986 12:00:00 AM
Firstpage
1054
Lastpage
1061
Abstract
A small rectangular pulse technique for measuring charge-pumping current has been proposed as a method to characterize interface traps near midgap. It is shown theoretically and experimentally that the small rectangular pulse technique can be used to predict the surface generation current measured on a MOSFET or a gated diode. This new technique has the advantage that the measured current is at least 10 to 100 times larger than the surface generation current.
Keywords
Character generation; Charge pumps; Current measurement; Diodes; Electric variables measurement; Interface states; MOSFET circuits; Pulse generation; Pulse measurements; Radiative recombination;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1986.22612
Filename
1485829
Link To Document