Title :
Analytical model for threshold voltage of ion-implanted short-channel IGFET´s
Author :
Mehta, S.K. ; Muralidharan, R.
Author_Institution :
Solid State Physics Laboratory, Delhi, India
fDate :
7/1/1986 12:00:00 AM
Abstract :
An analytical model for the threshold voltage for ion-implanted short-channel IGFET´s is presented. The coupled two-dimensional Poisson´s equation under the gate is solved rigorously. A closed-form analytical expression is derived for threshold voltage as a function of the material parameters and device geometry.
Keywords :
Analytical models; Boundary conditions; Doping profiles; Geometry; Permittivity; Poisson equations; Region 1; Region 2; Silicon; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1986.22615
