• DocumentCode
    1108930
  • Title

    Analytical model for threshold voltage of ion-implanted short-channel IGFET´s

  • Author

    Mehta, S.K. ; Muralidharan, R.

  • Author_Institution
    Solid State Physics Laboratory, Delhi, India
  • Volume
    33
  • Issue
    7
  • fYear
    1986
  • fDate
    7/1/1986 12:00:00 AM
  • Firstpage
    1073
  • Lastpage
    1074
  • Abstract
    An analytical model for the threshold voltage for ion-implanted short-channel IGFET´s is presented. The coupled two-dimensional Poisson´s equation under the gate is solved rigorously. A closed-form analytical expression is derived for threshold voltage as a function of the material parameters and device geometry.
  • Keywords
    Analytical models; Boundary conditions; Doping profiles; Geometry; Permittivity; Poisson equations; Region 1; Region 2; Silicon; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1986.22615
  • Filename
    1485832
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1108930