Title :
Velocity-field profile of n-silicon: A theoretical analysis
Author :
Ahmad, Nisar ; Arora, Vijay K.
Author_Institution :
King Saud Univeristy, Riyadh, Saudi Arabia
fDate :
7/1/1986 12:00:00 AM
Abstract :
A theoretical analysis of the drift velocity, mobility, and electron temperature as a function of the electric field for n-type silicon is made. This is based on the theory developed earlier by one of us. An excellent agreement with the experimentally observed behavior is obtained.
Keywords :
Electron mobility; Equations; Nonlinear optics; Optical saturation; Optical scattering; Phonons; Physics; Silicon; Temperature; Very large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1986.22616
