DocumentCode
1108960
Title
Tunable Solidly Mounted Thin Film Bulk Acoustic Resonators Based on BaxSr1−xTiO3 Films
Author
Berge, John ; Vorobiev, Andrei ; Steichen, William ; Gevorgian, Spartak
Author_Institution
Chalmers Univ. of Technol., Goteborg
Volume
17
Issue
9
fYear
2007
Firstpage
655
Lastpage
657
Abstract
Electrically tunable solidly mounted thin film bulk acoustic resonators based on BaxSr1-xTiO3 films are reported for the first time. The films are acoustically isolated from the silicon substrate by a Bragg reflector stack. Applying DC bias induces piezoelectric effect and an acoustic resonance at approximately 4 GHz. Under 10 V applied DC bias the resonance frequency of the resonators based on Ba0.25Sr0.75TiO3 films is tuned 1.2% to lower frequencies. The Q-factor of these resonators is approximately 120, and the electromechanical coupling coefficient is 0.5%. The resonant frequency of the BaTiO3 based resonators shifts upwards 1.3% under 10 V DC bias, and the -factor is approximately 30, with an electromechanical coupling coefficient of 6.2%.
Keywords
Q-factor; acoustic resonators; barium compounds; bulk acoustic wave devices; crystal resonators; piezoelectric thin films; strontium compounds; tuning; Ba0.25Sr0.75TiO3 - Interface; BaTiO3 - Interface; Bragg reflector stack; acoustic resonance; electromechanical coupling coefficient; ferroelectric device; piezoelectric effect; silicon substrate; thin film bulk acoustic resonator; tunable solidly mounted acoustic resonator; voltage 10 V; Film bulk acoustic resonators; Optical films; Piezoelectric films; Resonance; Resonant frequency; Semiconductor films; Silicon; Strontium; Substrates; Transistors; Bulk acoustic wave devices; ferroelectric devices; piezoelectric resonators; tunable circuits and devices;
fLanguage
English
Journal_Title
Microwave and Wireless Components Letters, IEEE
Publisher
ieee
ISSN
1531-1309
Type
jour
DOI
10.1109/LMWC.2007.903445
Filename
4295113
Link To Document