Photo-Induced Balanced Ambipolar Charge Transport in Organic Field-Effect Transistors

Author

Yingquan Peng ; Pengjie Gao ; Wenli Lv ; Bo Yao ; Guoying Fan ; Deqiang Chen ; Jipeng Xie ; Maoqing Zhou ; Yanli Li ; Ying Wang

Author_Institution

Sch. of Phys. Sci. & Technol., Lanzhou Univ., Lanzhou, China

Volume

25

Issue

22

fYear

2013

fDate

Nov.15, 2013

Firstpage

2149

Lastpage

2152

Abstract

Photo-induced balanced ambipolar transports in lead phthalocyanine organic field-effect transistor are observed. The transport mode of the device is changed from typical p-channel to ambipolar under illumination at 655 nm, 100 mW/cm². The physical origins of this phenomenon are resulted from the photo-induced energy barrier lowering for electrons injection at the source-channel interface, which is suggested to be the downward bending of orbital level in the channel material near the source by accumulation of photo generated holes there.

Keywords

organic field effect transistors; organic semiconductors; channel material; downward bending; lead phthalocyanine organic field effect transistor; orbital level; photo generated holes; photo induced balanced ambipolar charge transport; photo induced energy barrier; transport mode; wavelength 655 nm; Charge carrier processes; Electrodes; Energy barrier; Lighting; Logic gates; OFETs; Organic field-effect transistor; ambipolar; lead phthalocyanine;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2013.2280813

Filename

6589100