Title :
Photo-Induced Balanced Ambipolar Charge Transport in Organic Field-Effect Transistors
Author :
Yingquan Peng ; Pengjie Gao ; Wenli Lv ; Bo Yao ; Guoying Fan ; Deqiang Chen ; Jipeng Xie ; Maoqing Zhou ; Yanli Li ; Ying Wang
Author_Institution :
Sch. of Phys. Sci. & Technol., Lanzhou Univ., Lanzhou, China
Abstract :
Photo-induced balanced ambipolar transports in lead phthalocyanine organic field-effect transistor are observed. The transport mode of the device is changed from typical p-channel to ambipolar under illumination at 655 nm, 100 mW/cm2. The physical origins of this phenomenon are resulted from the photo-induced energy barrier lowering for electrons injection at the source-channel interface, which is suggested to be the downward bending of orbital level in the channel material near the source by accumulation of photo generated holes there.
Keywords :
organic field effect transistors; organic semiconductors; channel material; downward bending; lead phthalocyanine organic field effect transistor; orbital level; photo generated holes; photo induced balanced ambipolar charge transport; photo induced energy barrier; transport mode; wavelength 655 nm; Charge carrier processes; Electrodes; Energy barrier; Lighting; Logic gates; OFETs; Organic field-effect transistor; ambipolar; lead phthalocyanine;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2013.2280813
