DocumentCode :
1109088
Title :
A CMOS Active Balun Using Bond Wire Inductors and a Gain Boosting Technique
Author :
Lee, Dong Ho ; Han, Jeonghu ; Park, Changkun ; Hong, Songcheol
Author_Institution :
Korea Adv. Inst. of Sci. and Technol., Daejeon
Volume :
17
Issue :
9
fYear :
2007
Firstpage :
676
Lastpage :
678
Abstract :
An active balun with a single-ended input and a pair of differential outputs is presented for the input stages of differential circuits. The active balun, which is composed of an input resonator and cascaded common-gate amplifiers, was implemented using 0.18-mum CMOS technology and bond wire inductors. A body-source cross-coupled configuration was used to enhance the gain of the active balun. The gain is 9.3 dB at 1.8 GHz, and the phase and the amplitude error are less than 2deg and 1 dB, respectively, in the frequency range of 1 to 2 GHz, even for a P1dB of -2.7 dBm. The balun consumes 9 mA for 3-V supply voltage.
Keywords :
CMOS integrated circuits; UHF integrated circuits; baluns; gain control; inductors; CMOS active balun; CMOS technology; bond wire inductors; cascaded common-gate amplifiers; cross-coupled configuration; current 9 mA; differential circuits; frequency 1 GHz to 2 GHz; frequency 1.8 GHz; frequency range; gain 9.3 dB; gain boosting technique; input resonator; supply voltage; voltage 3 V; Active inductors; Bonding; Boosting; CMOS technology; Circuits; Frequency; Gain; Impedance matching; Voltage; Wire; Baluns; CMOSFET circuits; body effect; bonding; gain boosting;
fLanguage :
English
Journal_Title :
Microwave and Wireless Components Letters, IEEE
Publisher :
ieee
ISSN :
1531-1309
Type :
jour
DOI :
10.1109/LMWC.2007.903459
Filename :
4295126
Link To Document :
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