• DocumentCode
    1109141
  • Title

    Monolithic thin-film photoconductor—AC EL structure with extrinsic memory by optical coupling

  • Author

    Thioulouse, Pascal ; Solomon, Ionel

  • Author_Institution
    Center National d´´Etudes des Télécommunications, Bagneux, France
  • Volume
    33
  • Issue
    8
  • fYear
    1986
  • fDate
    8/1/1986 12:00:00 AM
  • Firstpage
    1149
  • Lastpage
    1154
  • Abstract
    A novel memory ZnS:Mn ac thin-film EL device is described. The deposition of a photoconducting thin film of amorphous silicon on a conventional EL layer stack induces a hysteretic L-V characteristic. Operating characteristics are discussed. Outstanding features are a typical memory margin of 9V peak and electrical switching times (ON and OFF) shorter than 2 ms under 1-kHz CW excitation.
  • Keywords
    Fabrication; Hysteresis; Optical coupling; Optical films; Photoconductivity; Semiconductor thin films; Sputtering; Thin film devices; Voltage; Zinc compounds;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1986.22633
  • Filename
    1485850
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1109141