Title :
A 100-MHz Breakdown-Resilient Power Converter With Fully Monolithic Implementation on Nanoscale CMOS Process
Author :
Yongtao Geng ; Dongsheng Ma
Author_Institution :
Univ. of Texas at Dallas, Richardson, TX, USA
Abstract :
A monolithic switched-capacitor power converter is designed in the nanoscale CMOS technology, employing a two-stage system architecture to mitigate overvoltage breakdown risk. The efficiency impact of various parasitic components is analyzed for design optimization on both the topology level and the device level. An external capacitorless low-dropout regulator with a wide bandwidth and a high power supply rejection ratio is introduced, removing high-frequency ripples and enabling a fast load transient response. The proposed design was implemented with the 180-nm CMOS process. At a switching frequency of 100 MHz, it regulates Vout at 0.8 Vout with a maximum power efficiency of 60%. When the load current switches between 1.5 and 15 mA, Vout responds within 45 ns, with a voltage droop below 45 mV.
Keywords :
CMOS integrated circuits; electric breakdown; load regulation; monolithic integrated circuits; network synthesis; overvoltage protection; power convertors; risk management; transient response; voltage control; breakdown resilient power converter; current 1.5 mA to 15 mA; external capacitorless low-dropout regulator; fast load transient response; frequency 100 MHz; fully monolithic implementation; high power supply rejection ratio; high-frequency ripple removal; load current switches; monolithic switched capacitor power converter design; nanoscale CMOS process; overvoltage breakdown risk mitigation; size 180 nm; time 45 ns; two-stage system architecture; voltage 0.8 V; voltage droop; Capacitors; Electric breakdown; Logic gates; Power transistors; Regulators; Reliability; Transistors; Design for reliability; Switched-capacitor power converter; design for reliability; monolithic implementation; switched capacitor (SC) power converter; voltage stress;
Journal_Title :
Industrial Electronics, IEEE Transactions on
DOI :
10.1109/TIE.2015.2414906