DocumentCode :
1109340
Title :
Heterojunction GaAs/GaAlAs I2L-ring oscillators fabricated by MBE
Author :
Narozny, Peter ; Beneking, H. ; Fischer, Russell J. ; Morkoc, Hadis
Author_Institution :
Aachen University of Technology, Aachen, West Germany
Volume :
33
Issue :
9
fYear :
1986
fDate :
9/1/1986 12:00:00 AM
Firstpage :
1238
Lastpage :
1241
Abstract :
GaAs/GaAlAs heterojunction bipolar transistors have been made and integrated to a seven-stage I2L-ring oscillator. The five layer sequence has been grown by MBE. The transistor operating upside down (inverted, collector on the top) exhibits a current gain up to 50 for one collector. A groove isolation technique has been used to isolate the gates from each other. The structure was planarized by polyimide, incorporated Ta thin-film resistors for the injectors as well as implanted resistors. A delay time of 3.0 ns at 60-µW power consumption has been achieved in the low power region which corresponds to a power delay product of 0,18 pJ and a minimum delay time of 700 ps has been obtained at 1 mW.
Keywords :
Bipolar integrated circuits; Delay effects; Gallium arsenide; Heterojunction bipolar transistors; Indium phosphide; Molecular beam epitaxial growth; Oscillators; Resistors; Senior members; Substrates;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1986.22652
Filename :
1485869
Link To Document :
بازگشت