• DocumentCode
    1109370
  • Title

    Comparison of Auger recombination in GaInAs-AlInAs multiple quantum well structure and in bulk GaInAs

  • Author

    Sermage, B. ; Chemla, D.S. ; Sivco, D. ; Cho, A.Y.

  • Author_Institution
    CNET, Bagneux, France
  • Volume
    22
  • Issue
    6
  • fYear
    1986
  • fDate
    6/1/1986 12:00:00 AM
  • Firstpage
    774
  • Lastpage
    780
  • Abstract
    Carrier lifetime has been measured in GaInAs-AlInAs multiple quantum well structures and in thick GaInAs samples for local carrier densities between 2 \\times 10^{17} and 5 \\times 10^{19} cm-3. Carrier lifetime and Auger recombination are found to be very close (±20 percent) in the two structures. The Auger limited T0values calculated for DH and MQW lasers are found to be, respectively, 93 and 170 K. Optimization of the quantum well laser as a function of the number of wells in the active region is discussed.
  • Keywords
    Optical fiber transmitters, lasers; Quantum-well laser; Charge carrier density; Charge carrier lifetime; Density measurement; Fiber lasers; Indium gallium arsenide; Laser beams; Laser modes; Quantum well lasers; Radiative recombination; Temperature;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1986.1073035
  • Filename
    1073035
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1109370