• DocumentCode
    1109424
  • Title

    Nearly ideal unguarded vanadium-silicide Schottky-barrier diodes

  • Author

    Drobny, Vladimir F.

  • Author_Institution
    Tektronix Inc., Beaverton, OR
  • Volume
    33
  • Issue
    9
  • fYear
    1986
  • fDate
    9/1/1986 12:00:00 AM
  • Firstpage
    1294
  • Lastpage
    1298
  • Abstract
    Nearly ideal VLSI unguarded Schottky-barrier diodes were made using a VSi2/nSi junction. The reverse-current leakage of these diodes is fully explained in terms of electric-field enhancement present near the diode edges. The values of the diode quality factor were nearly equal to unity and were identical to those of guarded diodes built on the same wafer. The ideality of the VSi2/nSi diode characteristics is attributed to controlled outdiffusion of silicon that occurs around the diode perimeter.
  • Keywords
    Adhesives; Circuits; Gold; Metallization; Neodymium; Schottky diodes; Silicides; Silicon; Simulated annealing; Very large scale integration;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1986.22661
  • Filename
    1485878
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1109424